DAI Chao;CHEN Xiangrong;

• 1:Zhejiang Provincial Key Laboratory of Electrical Machine Systems(Zhejiang University)

Abstract：

Based on the constraints of traditional Si materials and the development of wide bandgap material SiC, this paper sorts out and introduces the development of power electronics, the structure and packaging process of power electronic devices, the detection technology of power electronic devices and the research of power electronic insulation materials. The main detection technology is either partial discharge or electrical treeing measurement technology, and the research on dielectric properties of materials includes research methods such as breakdown strength, dielectric constant, electrical conductivity, and time-domain dielectric relaxation. The research methods of physical and chemical properties of the material mainly conclude scan-ning electron microscopy, ultrasonic scanning microscopy, Fourier infrared spectroscopy, thermal weight loss and differential scanning thermal analysis.

Key Words： wide bandgap(WBG);power electronic device;packaging;insulation;ageing

Abstract:

Keywords:

Foundation: 国家重点研发计划资助(2018YFB0904400);; 直流输电技术国家重点实验室(南方电网科学研究院有限责任公司)项目(SKLHVDC-2019-KF-18);; 浙江省自然科学基金项目(LY18E070003);; 中央高校基本科研业务费项目(2018QNA4017);; 宁波市“科技创新2025”重大专项;; 浙江大学“百人计划”(自然科学A类)

Authors: DAI Chao;CHEN Xiangrong;

DOI: 10.19585/j.zjdl.201910005

References：

• [1]OWEN E L.SCR is 50 years old[History][J].IEEE Industry Applications Magazine,2007,13(6):6-10.
• [2]王鹏，赵政嘉，刘雪山，等.电力电子设备中的电气绝缘问题[J].高电压技术，2018,44(7):2309-2322.
• [3]JR J A C,MELLOCH M R,SINGH R,et al.Status and prospects for SiC power MOSFETs[J].IEEE Transactions on Electron Devices,2002,49(4):658-664.
• [4]YODER M N.Wide bandgap semiconductor materials and devices[J].IEEE Transactions on Electronics Devices,1996,43(10):1633-1636.
• [5]BURKART R,KOLAR J.Comparative evaluation of Sic and Si PV inverter systems based on power density and efficiency as indicators of initial cost and operating revenue[C].Control&Modeling for Power Electronics,New York,USA:IEEE,2013.
• [6]WHITAKER B,BARKLEY A,COLE Z,et al.A highdensity,high-efficiency,isolated on-board vehicle battery charger utilizing silicon carbide power devices[J].IEEETransactions on Power Electronics,2014,29(5):2606-2617.
• [7]TIWARI O-M M S,UNDELAND T M.Comparative evaluation of a commercially available 1.2 kV SiC MOSFETmodule and a 1.2 kV Si IGBT module[C].Industrial Electronics Society,IECON 2016-42nd Annual Conference of the IEEE,New York,USA:IEEE,2016:1093-1098.
• [8]RYU S H,CAPELL C,JONAS C,et al.Ultra high voltage(>12 kV),high performance 4H-SiC IGBTs[C].International Symposium on Power Semiconductor Devices and Ics,New York,USA:IEEE,2012.
• [9]MARCKX.Breakthrough in Power Electronics from SiC:May 25,2004-May 31,2005[R].OSTI,2006.
• [10]CAI C.A review of SiC power module packaging:layout,material system and integration[J].Cpss Transactions on Power Electronics and Applications,2017,2(3):170-186.
• [11]BAYERER R,DOMES D.Power circuit design for clean switching[C].International Conference on Integrated Power Electronics Systems,New York,USA:IEEE,2010.
• [12]COPPOLA L,HUFF D,WANG F,et al.Survey on hightemperature packaging materials for SiC-based power electronics modules[C].Power Electronics Specialists Conference,New York,USA:IEEE,2007.
• [13]DIAHAM M-L L S,VALDEZ-NAVA Z.Dielectrics for high temperature SiC device insula-tion:Review of new polymeric and ceramic mate-rials[M].[S.l.]:INTECH Open Access Publisher,2011.
• [14]BROKAW W,ELMES J,GRUMMEL B,et al.Silicon carbide high-temperature packaging module fabrication[C].Wide Bandgap Power Devices and Applications,New York,USA:IEEE,2013.
• [15]KHAZAKA R,MENDIZABAL L,HENRY D,et al.Survey of high-temperature reliability of power electronics packaging components[J].IEEE Transactions on Power Electronics,2015,30(5):2456-2464.
• [16]SHENG W W,COLINO R P.Power electronic modules:design and manufacture[M].[S.l.]:Crc Press,2004.
• [17]MANIKAM V R,CHEONG K Y.Die attach materials for high temperature applications:A review[J].IEEE Transactions on Components Packaging and Manufacturing Technology,2011,1(4):457-478.
• [18]HAUMANN S,RUDZKI J,OSTERWALD F,et al.Novel bonding and joining technology for power electronicsEnabler for improved lifetime,reliability,cost and power density[C].Applied Power Electronics Conference and Exposition,New York,USA:IEEE,2013.
• [19]BOETTGE B,NAUMANN F,KLENGEL R,et al.Packaging material issues in high temperature power electronics[C].Microelectronics Packaging Conference,New York,US-A:IEEE,2014.
• [20]LIANG Z.Status and trend of automotive power packaging[C].International Symposium on Power Semiconductor Devices and Ics,[S.l.:s.n.],2012.
• [21]付鹏宇，赵志斌，崔翔.压接型IGBT器件绝缘研究问题与方法[J].电力电子技术，2018,52(8):38-40.
• [22]KHAZAKA R,MEDIZABAL L,HENRY D,et al.Assessment of dielectric encapsulation for high temperature high voltage modules[C].Electronic Components and Technology Conference,New York,USA:IEEE,2015.
• [23]PEARTON S J,ZOLPER J C,SHUL R J,et al.GaN:Processing,defects,and devices[J].Journal of Applied Physics,1999,86(1):1-78.
• [24]YAO Y,LU G Q,CHEN Z,et al.Assessment of encapsulants for high-voltage,high-temperature power electronic packaging[J].IEEE Transactions on Components Packaging and Manufacturing Technology,2012,2(4):539-547.
• [25]KHAZAKA,DIAHAM,BIDAN,et al.Effects of mechanical stresses,thickness and atmosphere on aging of;polyimide thin films at high temperature[J].Polymer Degradation&Stability,2013,98(1):361-367.
• [26]KHAZAKA S D R,LOCATELLI M L,BIDAN P.Thin insulation polyimide films endurance for high temperature power module applications[J].IEEE Transactions Components,Packaging Manufacturing Technology,2013,3(5):811-817.
• [27]CHIDAMBARAM V,YEUNG H B,CHAN Y S,et al.High-temperature endurable encapsulation material[C].Electronics Packaging Technology Conference,New York,USA:IEEE,2012.
• [28]DONZEL L,SCHUDERER J.Nonlinear resistive electric field control for power electronic modules[J].IEEE Transactions on Dielectrics and Electrical Insulation,2012,19(3):955-959.
• [29]Railway applications-power converters installed on board rolling stock-Part 1:characteristics and test methods:IEC61287-1[S].[S.l.:s.n.],2014.
• [30]FU P,ZHAO Z,CUI X,et al.Partial discharge measurement and analysis in high voltage IGBT modules under DC voltage[J].2018,4(4):513-523.
• [31]WANG N,COTTON I,ROBERTSON J,et al.Partial discharge control in a power electronic module using high permittivity non-linear dielectrics[J].IEEE Transactions on Dielectrics and Electrical Insulation,2010,17(4):1319-1326.
• [32]AUGE J L,LESAINT O,THI A T V.Partial discharges in ceramic substrates embedded in liquids and gels[J].IEEETransactions on Dielectrics and Electrical Insulation,2013,20(1):262-274.
• [33]FREY D,SCHANEN J L,AUGE J L,et al.Electric field investigation in high voltage power modules using finite element simulations and partial discharge measurements[C].Industry Applications Conference,New York,USA:IEEE,2003.
• [34]SATO M,KUMADA A,HIDAKA K,et al.Dynamic Potential Distributions of Surface Discharge in Silicone Gel[J].IEEE Transactions on Dielectrics and Electrical Insulation,2015,22(3):1733-1738.
• [35]SATO M,KUMADA A,HIDAKA K,et al.Surface discharges in silicone gel on AlN substrate[J].IEEE Transactions on Dielectrics&Electrical Insulation,2016,23(1):494-500.
• [36]MANCINELLI P,CAVALLINI A,CHALASHKANOV N,et al.Electrical treeing in silicone gel under square voltage:Frequency,rise time and crosslinking influence[C].Electrical Insulation&Dielectric Phenomena,New York,USA:IEEE,2016.
• [37]LOCATELLI M L,KHAZAKA R,DIAHAM S,et al.Evalu ation of encapsulation materials for high-temperature power device packaging[J].IEEE Transactions on Power Electronics,2014,29(5):2281-2288.